Method of making an article comprising a buried SiO2 layer.

摘要

A high quality subcritical SIMOX silicon-on-insulator wafers can be produced by a method that comprises a randomizing implant followed by an appropriate heat treatment. In a preferred embodiment, the inventive method comprises, in succession, a subcritical oxygen implant (nominal wafer temperature <350 DEG C) into a (100) Si wafer, a low temperature (500-700 DEG C) anneal, a high temperature (>1200 DEG C) anneal, a randomizing implant ( SIMILAR 5x10<1><4>Si/cm<2>, nominal wafer temperature <100 DEG C), and a low temperature anneal (nominal wafer temperature between 500 and 700 DEG C). The resulting buried SiO2 layer typically is relatively thin (e.g., 60 nm), stoichiometric, continuous, and essentially free of Si inclusions, and the Si overlayer typically is of device quality and essentially free of twins, with chi min SIMILAR 3%.