| 摘要 |
PURPOSE:To improve the protective effect of an insulated gate field-effect transistor by arranging a protective diode between a gate electrode lead-out section and a source electrode. CONSTITUTION:A protective diode 5 is connected between a gate electrode lead- out section 12 and a source electrode 15 in an insulated gate field-effect transistor. Since a connecting position on the gate side of the protective diode 5 is positioned at the gate electrode lead-out section 12 up to a gate electrode metallic layer 11 from a gate bonding pad 1, the voltage of a high-frequency component is not applied to a gate, and a protection effect is improved. |
