| 摘要 |
PURPOSE:To shorten the distance between a source-drain electrode and a gate electrode and to easily form a low-resistance metal on the gate electrode by a method wherein, after the side wall of an insulator whose height is higher than that of the gate electrode has been formed beside the gate electrode, the source-drain electrode and the low-resistance metal on the gate electrode are formed at the same time. CONSTITUTION:An active layer 7 is formed inside a GaAs substrate 1; a film 2 composed of a refractory material is formed; a silicon oxide film 3 is formed on the film. After a photoresist pattern 4 has been formed, a reactive ion etching process is executed by making use of the photoresist pattern as a mask. After only the resist pattern 4 has been removed and an n<+> layer 8 has been formed, a silicon nitride film 5 is formed. After the silicon nitride film 5 has been etched isotropically from right above, silicon nitride side walls 5a are formed on both sides of a gate. After removal of the silicon oxide film 3, photoresist patterns 4a are formed. After an ohmic metal 6 has been evaporated, the resist patterns 4a are removed and the ohmic metal at the unnecessary pattern is lifted off.
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