| 摘要 |
PURPOSE:To control electrically and variably an exposure time in a desired time in a solid-state image sensing device of an L-OFD structure having an electronic shutter mechanism by a method wherein the film thickens of the insulating film on the overflow control gate region is made thinner than that of the insulating film on the charge storage region. CONSTITUTION:A light-receiving part 7, a vertical register part 8, an horizontal register part and an output part are provided on a P-type Si substrate 1. A charge storage region 2 and an overflow control gate region are formed under the light-receiving part 7 and a front electrode 6 consisting of a poly Si film and having light transmission properties is formed on the OFCG region 3 through an insulating film 5 consisting of an SiO2 film. In this case, the insulating film 5 is formed in such a way that the film thickness of a part 5A on the OFCG region 3 becomes thinner than that of a part 5B on the charge storage region 2. For example, when +10[V] is supplied to the front electrode 6, the potential of the OFCG region 3 becomes deeper than that of the charge storage region 2. Accordingly, the signal charge stored in the charge storage region 2 is swept out to an overflow drain (OFD) region 4. |
