A heteroepitaxial growth method comprising growing a semiconductor single-crystal film (8) on a semiconductor single-crystal substrate (A) with a lattice constant (a1) different from that (b1) of the semiconductor single-crystal film (B) by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film (B) being inclined at a certain angle (1 DEG -30 DEG ) with respect to the semiconductor single-crystal substrate (A).
