| 摘要 |
1. Process for the manufacture of a monocrystalline semiconductor film on an insulating support, in which : - a semiconductor film (4) is deposited on a refractory insulating support (2), - a number of parallel non-reflective bands (6) are produced on the semicondutor film (4), - the assembly is scanned using the radiation of a continuous laser beam of sufficient energy to melt the semiconductor film locally and to cause a recrystallization of the semiconductor film, and - the non-reflective bands (6) are removed, characterized in that it consists in : - subjecting one of the ends of the semiconductor film (4) to the action of a luminous radiation in the form or a ray (8) directed perpendicularly to the non-reflective bands (6), by rapidly scanning, at a frequency higher than 10 kHz, the semiconductor film (4) in a direction (Y) perpendicular to the non-reflective bands (6), by means of the continuous laser beam (12), and - moving the support (2) and/or the ray (8) in parallel with the non-reflective bands (6) so as to scan the whole of the semiconductor film (4), in a single operation and to thus recrystallize the film in a monocrystalline form. |
