| 摘要 |
PURPOSE:To prevent a semiconductor element from shifting and turning due to vibration and impact, by forming a first electrode on one main surface of the semiconductor element and interposing an insulating layer with recesses and projections on its surface between a compensating plate and a fourth metallic thin plate which is interposed for hermetical sealing between a ceramic part and a second electrode disposed on the other main surface of the semiconductor element through the compensating plate. CONSTITUTION:Recesses and projections formed on a surface of an insulating layer 10 are different 0.5 mm or so in their heights, and resin such as silicone rubber or fluoro-rubber is sticked on a diaphragm 6 and molded and divided. A semiconductor element 9 and a compensating plate 8 are inserted into a ceramic-metal seal package composed of an electrode 1, flanges 2, ceramic parts 3, and welding rings 4. An anode housing, which is composed of an electrode 7, the compensating plate 8, a semiconductor 9, and the insulating layer 10, is installed, and argon arc welding is performed on end parts of the welding rings 4 and 5. Even if vibration and impact are applied to the semiconductor element 9 at the time of transportation, testing and handling, the semiconductor element 9 is prevented from turning and shifting in its position due to its minute motion because contact friction force exerts on the semiconductor element due to its contact through the compensating plate 8 between the insulating layer 10 and the semiconductor element 9.
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