Interconnecting wire for semiconductor devices

摘要

An interconnecting wire of aluminum alloy for semiconductor devices which as improved ball-forming performance in the ball-bonding process, without any loss of conductivity and corrosion resistance. There is also provided an interconnecting wire for semiconductor devices which is lowered in resistance, with a minimum loss of conductivity and without any adverse effect on the bonding performance. The interconnecting wire contains about 0.1 to 45 wt % of an element having a melting point lower than about 450 DEG C., with the balance being substantially aluminum, or contains about 0.1 to 45 wt % of one more elements having a melting point lower than about 450 DEG C. and about 0.2 to 2 wt % of one or more elements selected from the group consisting of silicon, magnesium, manganese, and copper, with the balance being substantially aluminum.