| 摘要 |
PURPOSE:To increase breakdown strength between a gate and a drain by forming a low concentration region having low carrier concentration to an active layer between a gate and a drain electrode. CONSTITUTION:Source and drain electrodes 9a and 9b are shaped onto an N-type active layer 2 in the surface of a semi-insulating substrate 1 through a gate 3 and ohmic electrodes 7a and 7b, a P-type impurity is introduced into the active layer between the gate 3 and the ohmic electrode 7b for a drain in a self-alignment manner with the gate 3, and an ion implantation region 6 is formed as a low concentration region in which carrier concentration is lowered. Accordingly, breakdown strength between the gate and the drain is increased without fluctuating threshold voltage and characteristics such as transconductance, and capacitance between the gate and the drain can be reduced. |
