| 摘要 |
PURPOSE:To obtain a phase-match monolithic type multi-cell type field-effect transistor, and to improve yield by each connecting a gate electrode and a drain electrode in a unit cell by a gate electrode and a drain electrode in another adjacent unit cell and a resistor formed onto a semiconductor substrate. CONSTITUTION:A plurality of MISFET type unit cells 6 are formed onto a substrate, and gate electrodes 2 and drain electrodes 3 in adjacent unit cells respectively through resistors 4g, 4d consisting of polycrystalline silicon shaped to connecting section 5 among unit cells are connected, thus forming monolithic type ICs. The unit cells 6 are each connected by the resistors 4d, 4g, coupled electromagnetically on operation and phase-match, thus resulting in oscillation more difficult than a hybrid type, then facilitating assembly. Accordingly, yield and characteristics are equalized.
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