| 摘要 |
PURPOSE:To prevent the deterioration of temperature characteristics at the time of no load based on the difference of thermal expansion coefficients by forming a metallic film onto an oxide film and a wiring layer laminated onto the surface of a thin section of a semiconductor substrate through an insulating film. CONSTITUTION:A metallic film 7 is shaped onto an oxide film 3 and a wiring layer 4 laminated onto the surface of a thin section 5 of a semiconductor substrate through an insulating film. An effect on the temperature characteristics of a pressure sensor due to the application of the oxide film having a thermal expansion coefficient smaller than the semiconductor substrate by approximately one figure onto the semiconductor substrate can be compensated by laminating the metallic thin-film having a thermal expansion coefficient larger than the oxide film and the semiconductor substrate, thus generating no strain in the thin section 5 even when a temperature changes. Accordingly, output voltage under the no-load state is kept approximately constant within the range of the working temperature of the sensor, thus improving the precision of concentration characteristics.
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