| 摘要 |
PURPOSE:To improve electrical connection characteristics between a polycide structure and another metallic wiring layer by forming an opening shaping an electrical connection section between a polycide-gate electrode or a polycide wiring layer and another metal lic wiring layer, onto a polycrystalline silicon single layer shaping the lower layer section of the polycide-gate electrode or the polycide wiring layer. CONSTITUTION:An opening 15 forming an electrical connection section between a polycide-gate electrode or a polycide wiring layer 4 and another metallic wiring layer 6 is shaped onto a polycrystalline silicon single layer 3 forming the lower layer section of the polycide-gate electrode or the polycide wiring layer. A polycide is shaped only by the polycrystalline silicon single layer 3 in the connection section between a polycide structure and another metallic wiring layer 6 at that time. Accordingly, the 'peeling' and 'the roughening of the surface' of the silicide layer due to the heat treatment, etc., of the opening for electrical connection shaped onto the polycide layer 3 can be avoided.
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