| 摘要 |
PURPOSE:To increase latch-up resistance, and to lower ON resistance at the time of operation sufficiently by forming a second conductivity type conductivity modulation region, conductivity of which is modulated by the injection of minority carriers from a high concentration region and which recombines injected minority carriers. CONSTITUTION:A second conductivity type conductivity modulation region, conductivity of which is modulated by the injection of minority carriers from a first conductivity type high concentration region 1 and which recombines injected minority carriers, is shaped onto the high concentration region, a second conductivity type first base region 4 substantially functioning as a drain is formed onto the conductivity modulation region, first conductivity type channel regions 6 are shaped on the surface side of the first base region 4, and second conductivity type source regions 7 are formed into the channel regions. Accordingly, conductivity is modulated sufficiently by the injection of minority carriers from the high concentration region 1, ON resistance at the time of operation is lowered while minority carriers are decreased because minority carriers are recombined, and the inflow of minority carriers into the channel regions is avoided. thus preventing the generation of a latch-up phenomenon.
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