| 摘要 |
PURPOSE:To obtain fine working and desired characteristics easily by forming a gate at the center of a recessed section through self-alignment. CONSTITUTION:A field oxide film in a field-effect transistor forming region 4 in a field oxide film shaped onto a substrate 1 is removed selectively, a gate oxide film 2a and polycrystalline silicon are deposited to a predetermined thickness, and a resist 6 is formed selectively only in a polycrystalline silicon recess 10 on a gate forming region. Polycrystalline silicon is etched in an anisotropic manner to shape a gate electrode. An unnecessary section except the gate electrode and the gate oxide film is got rid of, and source-drain regions are formed while an inter-layer insulating film is shaped and an electrode wiring is conducted. Accordingly, gate electrode length can be formed in size shorter than the size of a mask, and the gate electrode can be arranged at the center of the recess through self-alignment, thus easily obtaining fine working and desired characteristics.
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