| 摘要 |
PURPOSE:To form a fine space wiring easily by using a first metallic film having a multilayer structure whose uppermost layer is an Au layer formed onto a predetermined electrode and on the bottom of a through-hole in a polyimide resin film as a feed metal at the time of the formation of a gold plating layer. CONSTITUTION:A first metallic film 5 having a multilayer structure using an Au layer as an uppermost layer is shaped onto a semiconductor substrate 1, one part of the first metallic film 5 is removed, and the metallic film 5 is left only on and outside predetermined electrodes 7. A polyimide resin 6 is applied onto the substrate including the first metallic film 5 to shape a resin film while a second metallic film 7 having a multilayer structure employing the Au film as the uppermost layer is formed onto the polyimide resin film 6. The second metallic film 7 and the polyimide resin film 6 are machined according to a pattern, and the first metallic film 5 is used as a feed metal and a gold plating layer 9 is shaped. Accordingly, a steep fine through-hole can also be filled with the gold plating layer completely, thus acquiring a space wiring having small wiring capacitance and capable of operating at high speed.
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