| 摘要 |
PURPOSE:To simplify a manufacturing process, and to reduce cost by forming a first electrode, P-type amorphous Si, I-type amorphous Si and N-type amorphous Si onto a substrate in succession, change one part of an N-type amorphous Si layer into an oxide, a nitride or a carbide and shaping a second electrode onto a transform. CONSTITUTION:Thin-film layers of a first electrode 2, P-type amorphous Si 3, I-type amorphous Si 4 and N-type amorphous Si 5 are formed into a substrate 1 in succession, one part of the N-type Si amorphous Si layer 5 is converted into an oxide, a nitride or a carbide, such as SiO2, Si3N4 or SiC by thermally treating or plasma-treating the thin-film layers in the atmosphere of O2, N2, CH4, CO, CO2 or the like, and a second electrode 7 is shaped onto the oxide, the nitride or the carbide. Accordingly SiO2, etc., need not be laminated anew onto the N-type amorphous Si layer 5, thus simplifying a manufacturing process, then reducing manufacturing cost. |
