| 摘要 |
A memory cell (10) has a bipolr decoupling element (56), (68), (82), (92) having an exterior contact (36). A refractory conductive layer (40) is formed on contact (36), and an initially nonconductive antifuse layer (48) is formed on refractory layer (40). A nonrefractory metal layer (50) is formed on the nonconductive layer (48). Blocking elements (56) (68), (82) (92) are connected to a word line (52), (78). When a specified voltage is impressed across the nonrefractory metal layer (50) and the word line (52), (78), nonrefractory metal diffuses through the initially nonconductive layer (48) to the refractory conductive layer (40) to provide a conductive path between the two.
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