发明名称 DETECTING METHOD FOR TEMPERATURE ABNORMALITY AND ITS SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To automatize calibration, and to detect the temperature abnormality of a semiconductor integrated circuit chip without remarkably rising its cost, by providing a circuit for storing temperature characteristics of an element, and comparing its storage contents with momentary element characteristics. CONSTITUTION:A temperature detecting circuit 1 is constituted of diodes D1a, D2a, D1b and D2b, and resistances Ra, Rb for supplying a current to these diodes, and by utilizing a fact that element characteristics depend on a temperature, a signal for reflecting the temperature is outputted. A storing circuit 2 cuts and stores a suitable fuse element, and stores an output voltage of the circuit 1 at a set temperature. A comparing circuit 3 using a differential amplifier compares an output of the circuit 1 with the storage contents of the circuit 2, and the output of the circuit 1 exceeds an allowable temperature stored in the circuit 2, it is decided to be an abnormal temperature, a base voltage of a transistor Qa becomes higher than a base voltage of a transistor Qc, an interrupting signal INT becomes a high level and an interruption is applied.
申请公布号 JPS63128276(A) 申请公布日期 1988.05.31
申请号 JP19860274030 申请日期 1986.11.19
申请人 HITACHI LTD 发明人 MASUDA NOBORU;YAGYU MASAYOSHI;MASAKI AKIRA
分类号 H01L21/66;G01R31/26;G01R31/28 主分类号 H01L21/66
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