| 发明名称 |
Method for manufacturing a perpendicular sidewalled metal layer on a substrate |
| 摘要 |
A thick resist layer is formed on a thin metal film and the resist layer is dry-etched by using an SiO2 mask formed selectively on the resist layer, and a thick wiring metal layer is formed by plating method with using the dry-etched resist layer, which has perpendicular side walls as a mask, thereby to form a low resistance and fine-patterned wiring metal layer.
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| 申请公布号 |
US4747909(A) |
申请公布日期 |
1988.05.31 |
| 申请号 |
US19860853762 |
申请日期 |
1986.04.18 |
| 申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
KANAZAWA, KUNIHIKO;KAZUMURA, MASARU |
| 分类号 |
H01L29/812;H01L21/02;H01L21/027;H01L21/288;H01L21/311;H01L21/3205;H01L21/338;H01L21/48;H05K3/00;H05K3/10;H05K3/38;(IPC1-7):H01L21/312;C25D5/02 |
主分类号 |
H01L29/812 |
| 代理机构 |
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代理人 |
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