| 摘要 |
PURPOSE:To enable the stable operation of semiconductor devices in superhigh frequency region by providing resistors and lands for bonding at the internal front ends of internal terminals, thereby preventing or substantially reducing the influence of unnecessary terminals. CONSTITUTION:The circuit formed on a semiconductor element 1 is conducted to leads 3 by bridge between bonding pads 2 and internal terminals 4 by an Al thin wire 8. Resistors 10 are formed at the ends of the internal terminals 4 and lands 11 made of conductive coat are formed at the ends of said resistors. The leads 11 of unnecessary internal terminals 4 and the package base 6 are bonded with an Al thin wire 9, thereby ending the transmission line composed of the unnecessary internal terminals 4 and a metalized layer on the back of a dielectric substrate 7 by the resistors 10. If resistance value of the resistors 10 is determined to be about equal to the characteristic impedance of said line, the influence of resonance can be minimized. |
