| 摘要 |
PURPOSE:To enable a vacuum chamber to be cleaned up without removing an ion source from the vacuum chamber by a method wherein a plasma producing means and a transfer means to produce plasma as cleaning gas serving both as a part of plasma producing means are provided. CONSTITUTION:Multiple specimens 24 are mounted on the peripheral part of rapidly turning disc 26 provided in a vacuum chamber 18. Then, respective specimens 24 are successively ion beam-etched by irradiating with ion beams 16 from an ion source 2. On the other hand, during the ion etching process, a shutter 20 is shut up to impress the space between the shutter 20 and the disc 26 with high-frequency from a high-frequency power supply 32 so that plasma may be produced to successively etch the specimens 24. In order to clean up the ion source 2, the high-frequency impressed positions are located by properly selecting the positions of transfer switched 40a, 40b so that inner gas may be fed to remove any pollutant by sputtering process.
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