| 摘要 |
PURPOSE:To attain high photosensitive characteristics and reduce residual potential of the titled body by laminating at least an a-Si layer and an amorphous silicon germanium carbide layer (a-SiGeC layer) on a conductive substrate in this order, and by generating substantially a photocarrier at the a-SiGeC layer, thereby preventing to trap an optical pumping carrier at the layer range of the titled body. CONSTITUTION:The a-SiGeC layer 5 is selected to the photo-carrier generating layer. The titled body is formed by combining the layer 5 and the a-Si layer 6, and by laminating them in this order as shown by the figure. In this case, the a-Si layer 6 has the functions of transferring the carrier generated at the a-SiGeC layer 5 and holding a potential and also has the function of hindering the injection of carrier to the a-SiGeC layer 5 from the substrate 1. Thus, in case that the a-Si layer 6 is interposed between the carrier generating layer and a substrate, the mobility of carrier in the a-Si layer itself is relatively high, thereby lessening remarkably the trap of the carrier within the a-Si layer. As the result, the titled body having high photosensitivity and capable of reducing the residual potential is obtd. |
