| 摘要 |
A support for transistors operating at high frequencies includes an electrically insulating, heat conductive base member having a conductive pad, on which a transistor may be mounted, on a portion of one of its surfaces and a conductive ground plane on the remainder of that surface. An apertured, insulating plate member is bonded to the base member and has conducting areas thereon to which the active regions of the transistor may be coupled in a manner characterized by low parasitic reactances.
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