| 摘要 |
PURPOSE:To prevent latchup in an integrated circuit device in which a pulurality of power source wirings are connected, by providing a main surface part of a substrate between circuits with a semiconductor region which has an inverse conductivity type of a substrate serving as the collector region of a parasitic transistor and to which a specified electric potential is applied. CONSTITUTION:A semiconductor region 7 is formed on a main part of a semiconductor substrate 1 between an analog circuit AC and a digital circuit DC, to be more concrete, between semiconductor regions 5a which are used as the guard band. The semiconductor region 7 is composed of a p<-> type semiconductor region 2A of low impurity concentration whose conductivity type is inverse to the semiconductor substrate 1 and a p<+> type semiconductor region 6B formed on the main surface part whose impurity consentration is high. From an external terminal BP, the reference voltage AVSS of a power source is applied to the region 6B of the circuit AC side region 7, and from the external terminal BP, the reference voltage DVSS of the power source is applied to the region 6B of the circuit DC side region 7. Thus the semiconductor region 7 is arranged between the circuit AC and the circuit DC to prevent latchup. |
