| 摘要 |
PURPOSE:To decrease the generation of pin holes, and improve the yield, by forming a gate insulating film in the form of a two-layer structure applying different methods. CONSTITUTION:An electrode 21 is formed on a substrate 20. Aqueous solution of citric acid 22 is made, and filled between a gate electrode as a positive electrode and a platinum plate 23 as a negative electrode. Thus a first insulative film 24 applying in anode oxide film is formed on the gate electrode 21, and then a second insulative film 25 is formed. Further, an intrinsic amorphous silicon layer 26 and an N-type amorphous silicon layer 27 are formed. Next, a source.drain electrode, a transparent electrode, a passivation film, a light shielding film and a liquid crystal orientation film, etc., are formed, and a liquid crystal panel provided with a thin film transistor is formed. |
