| 摘要 |
PURPOSE:To bring about excellent processing results by a method wherein the elements to be processed are heated and irradiated with light by a means heating them at specified temperature as well as light sources radiating light. CONSTITUTION:The air inside a processing chamber 1 is exhausted from an exhaust port 5 to be vacuumized at specified degree of vacuum simultaneously specified gas is fed to the inside of processing chamber 1 through a gas inlet 4 to fill it with the specified gaseous atmosphere. Furthermore, as soon as multiple semiconductor wafers 8 held by a heating base 2 are heated at specified temperature, multiple light sources 7 provided outside the processing chamber 1 are lighted to irradiate the multiple semiconductor wafers 3 with the light 8 such as ultraviolet rays etc. radiated from the light source 7 passing through window parts 6. Resultantly, the electric properties of semiconductor elements formed on the surface of semiconductor wafers 3 can be prevented from changing unstably affected by any electronic damage.
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