| 摘要 |
PURPOSE:To improve the reliability of a program of a storage circuit by constituting a storage circuit by a multi-electrode structure of bipolar transistor (TR) having two emitter electrodes, connecting the collector to a power supply, connecting one of the emitter electrodes to the input line and the other to an output line so as to relieve the drive load of the input line. CONSTITUTION:The storage circuit M is programmed depending whether or not the junction of the emitter electrode E1 connected to an input line X is destroyed by a reverse break-down. That is, the input X of the electrode E1 is brought into an H level and an output line Y of the emitter electrode E2 is brought into an L, then the junction of the electrode E1 is destroyed by the reverse breakdown, but the junction of the electrode 2 is not destroyed because of the forward direction. As a result, the electrode E1 is short-circuited to the base of a TRQn, the input line X is connected to the base electrode B of the TRQn, the input current of the line X is amplified by the TRQn and outputted to the line Y. Moreover, a TRQm whose junction of the electrode E1 is not destroyed does not amplify the input current through the line X and no current is outputted to the line Y.
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