| 摘要 |
PURPOSE:To determine the separation distance between an active layer and a block layer, and increase gain and mode characteristics, by arranging, in a groove, a semiconductor layer wherein laser light is generated by injecting a carrier into an active layer which is narrower than the width of a stripe-type groove and faces the groove. CONSTITUTION:On an n-type GaAs substrate 1, the following are formed in order; a buffer layer 2, a clad layer 3, an active layer 4, a first clad layer 5, a first block layer 6 and a second block layer 7. By etching, a stripe-type groove A is formed on the second block layer 7, and a stripe-type groove B larger than the groove A is formed on a first block layer 6. Thereon, a second clad layer 8 and a cap layer 9 are formed, and a semiconductor layer 8a and a gap 15 are formed. Thereon, a photoresist pattern 13 is formed except for the upper part of the gap 15, which is eliminated by etching. The pattern 13 is eliminated, and an insulating layer 10 is formed leaving a part of the upper region of the semiconductor layer 8a.
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