| 摘要 |
PURPOSE:To achieve high subexciting effect for accelerating the surface processing speed by a method wherein a reaction gas feeding means is provided in a reaction chamber. CONSTITUTION:A CVD device is provided with a reaction tube 4 comprising a box type vessel 3 wherein a gas leading-in part 1 is fixed to a sidewall while an exhaust pipe 2 is fixed to another sidewall opposing to the former sidewall. An ultraviolet ray lamp 6 is provided above an upper wall part 6 of the vessel 3 almost entirely made of quartz glass. Besides, a susceptor 7 is mounted on the bottom part of vessel 3. First, a semiconductor wafer 13 is mounted on the specified position of susceptor and then UV lamp 6 and a laser oscillator 12 are actuated to meet the processing requirements. Finally, reaction gas composed of ammonia and disilane is fed from the gas leading-in part 1 to form a film comprising silicon nitride.
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