| 摘要 |
PURPOSE:To obtain a copper alloy for semiconductor device lead material excellent in solderability, adhesive strength of plating, and etching characteristic, by specifying a composition consisting of Cr, Si, and Cu and also by controlling the size of a precipitate. CONSTITUTION:The copper alloy for semiconductor device lead material has a composition consisting of, by weight, 0.05-1.0% Cr, 0.02-0.8% Si, and the balance essentially Cu and further containing, if necessary, 0.01-1% of one or more elements among Zn, Mg, P, Sn, Fe, Be, Ti, Hf, Co, and In and also has a structure in which size of a precipitate is regulated to <=1.0mum. This copper alloy is excellent in strength, electric conductivity and heat resistance and further has superior workability, etc. The size of the above precipitate is controlled by properly selecting a combination of solution heat treating, cold working, and age treating conditions.
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