| 摘要 |
PURPOSE:To obtain an anisotropic C0 film in a highly saturated magnetization plane by inclining the angle formed between the direction of evaporated C0 atoms and the normal direction of a substrate at 45-90 deg., and inclining the C axis of a C0 crystal by an MBE method in a direction parallel to the surface of the substrate. CONSTITUTION:A substrate 1 in a vacuum vessel 2 is formed of an Si single crystal or glass, and is so supported to a substrate manipulator 3 that the normal line of the surface of the substrate becomes 45-90 deg. with respect to an electron beam gun 4. The manipulator 3 elevationally moves, the substrate 1 can be evaluated in the orientation and the crystal structure of the film through a gate valve 5 by an X-ray in an analysis chamber, and the substrate between the chamber 6 and the vacuum chamber 2 can be moved by an electric motor in a substrate introducing and conveying chamber 7. Evaporated atoms from the gun 4 are grown by this MBE device while holding a certain angle with respect to the substrate 1, and the C axis of the C0 crystal can be made parallel to the surface of the substrate. Thus, the direction of the C axis becomes an axis of easy magnetization to obtain a thin C0 film oriented with a magnetic anisotropy in a plane.
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