发明名称 METHOD FOR SYNTHESIZING BORON NITRIDE
摘要 PURPOSE:To easily synthesize hard BN in a vapor phase by evaporating metal B by projection of electron rays, supplying N and inert gas into a hollow cathode as an electronic gun for projection of the electron rays and converting the gas to plasma at the time of synthesizing the hard BN on the surface of a substrate by a vapor phase synthesis method. CONSTITUTION:The inside of a reaction vessel 1 is evacuated to a vacuum and a substrate 2 for vapor deposition is connected to a high-frequency power supply 7. The space below the same is heated by haters 3a, 3b, 3c. The electron rays are generated from the electron gun 14 as the hollow cathode and are projected to the metal boron 5 provided in the reaction vessel 1 to melt and evaporate the boron 5. The gas prepd. by mixing the gaseous N at 1-99vol% ratio with Ar is released from the hollow electron gun 14 and is excited to generate the plasma. The evaporated B and the gaseous N in the plasma state are brought into the vapor phase reaction by which the BN such as cubic BN or wurtzite type BN having the extremely high hardness is formed on the surface of the substrate 2.
申请公布号 JPS63125659(A) 申请公布日期 1988.05.28
申请号 JP19860270586 申请日期 1986.11.13
申请人 SUMITOMO ELECTRIC IND LTD 发明人 TOBIOKA MASAAKI;FUKUSHIMA KAZUHIKO;IKEGAYA AKIHIKO
分类号 C23C14/06;C23C14/30 主分类号 C23C14/06
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