发明名称 POWER SOURCE DEVICE USING INSULATED GATE TYPE FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To improve the efficiency of a converter, by using a pressure-up circuit to a gate bias circuit of a MOSFET. CONSTITUTION:A single-chip formed type switching regulator (DC/DC converter) modulates input voltage 1 in pulse width for a switching MOSFET 3 and decreases the voltage through a transformer 2. This pulse voltage is rectified with MOSFET's 5 and 6 and smoothed with a reactor 10 and a capacitor 11 to obtain DC output voltage 12. At this moment, as a gate bias circuit of MOSFET's 5 and 6 operating as a rectifying diode, the booster circuits 7 and 8 are built in. The output voltage of a pulse width modulation circuit 4 is increased with the booster circuits 7 and 8, so that the gate drive of MOSFET's 5 and 6 can be fully performed.
申请公布号 JPS63124767(A) 申请公布日期 1988.05.28
申请号 JP19860269637 申请日期 1986.11.14
申请人 HITACHI LTD 发明人 YOSHIDA ISAO;OKABE TAKEAKI;WATABE TOMOYUKI;KIMURA MASATOSHI
分类号 H02M3/155;H01L29/78;H02M3/28 主分类号 H02M3/155
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