| 摘要 |
PURPOSE:To make it possible to perform stable, excellent connection having a small resistance value, by die-bonding a metallic die on the surface of which gold is plated, at a gold wire connecting part of a metallized layer, and bonding a gold wire on said metallic die. CONSTITUTION:A main part 4a consists of iron or Kovar. A gold plated layer 4b is formed on the surface of the part 4a. Thus a metallic die 4 is prepared. Said die is bonded on a wiring pattern 2a. Then a gold wire 5 is first bonded on the electrode of a semiconductor chip 3. Thereafter the second bonding is performed on the gold plate layer 4b at the surface of the metallic die 4, and the semiconductor chip 3 and the wiring pattern 2a are electrically connected. Since the metallic die 4 is fixed to the wiring pattern 2a, which is constituted of the metallized film 2 containing a bonding material such as glass, the metallic die 4 can be excellently connected to the wiring pattern 2a. Since the second bonding of the gold wire is performed to the gold plated layer 4b of the surface of the metallic die 4, extremely excellent connection can be implemented. |
