| 摘要 |
PURPOSE:To improve crystalline property and resistivity, by forming the current narrowing layer and a light confining layer of a II-VI compound semiconductor, by an MOCVD method, where organic zinc compound, which is an addition body of dialkylzinc and dialkylselenium, is used as a zinc source. CONSTITUTION:On an N-type GaAs single crystal substrate 301, the following layers are sequentially laminated by an organic-metal vapor-phase thermal decomposition (MOCVD) method: an N-type GaAs buffer layer 306; an N-type AlGaAs clad layer 305; a GaAs or AlGaAs active layer 304; a P-type AlGaAs clad layer 303; and a P-type GaAs contact layer 302. A stripe shaped rib is formed in a photolithography step. Then an addition body, which is formed by equal-mol mixing of dialkylzinc and dialkylselenium, is used as a Zn source, and a ZnSe layer 307 is embedded and grown by the MOCVD method. The ZnSe layer 307 on the rib is etched again by the photolithography step, and a P-type ohmic electrode 308 and an N-type ohmic electrode 309 are formed.
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