发明名称 PRODUCTION OF THIN AMORPHOUS TA ALLOY FILM
摘要 PURPOSE:To easily produce a thin amorphous Ta alloy film having excellent mechanical properties, corrosion resistance, etc., by sputtering the Ta-Si-B alloy expressed by the specific formula and depositing said alloy by evaporation on a cooled substrate. CONSTITUTION:The Ta-Si-B alloy having the compsn. expressed by the formula Ta1-x(Si1-yBy)x (x=0.01-0.4, y=0.01-0.99) is installed as a target 1 in a chamber 3 and is cooled with cooling water. The substrate 2 is installed thereabove and is cooled with liquid nitrogen 12 down to a room temp. or below. The inside of the chamber 3 is then evacuated to a vacuum by a vacuum pump 4 and gaseous Ar is introduced through an introducing pipe 7 into the chamber until a prescribed pressure is attained. A high-frequency power supply 8 is turned on and sputtering is executed by a conventional method. The thin amorphous Ta alloy film having a high crystallization temp. is thereby easily formed on the substrate 2 over a wide area with uniform quality.
申请公布号 JPS63125664(A) 申请公布日期 1988.05.28
申请号 JP19860270180 申请日期 1986.11.12
申请人 NEC CORP 发明人 YOSHITAKE TSUTOMU;KUBO YOSHIMI;IGARASHI HITOSHI
分类号 C23C14/14;C23C14/34 主分类号 C23C14/14
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