| 摘要 |
PURPOSE:To obtain an optical memory element capable of reproducing signals with high sensitivity without using a laser light source by providing a Schottky varrier type semiconductor element based on junction between a semiconductor and metal with a high resistance layer formed between the semiconductor and the metal. CONSTITUTION:The high resistance layer 2 and a metal electrode layer 3 are successively formed on the surface of a semiconductor substrate 1. When a voltage is impressed to the substrate 1 and the layer 3, voltage destruction of the layer 2 is generated and Schottky junction based on the base 1 and the layer 3 is obtained at the portion. Although said voltage destruction part generates optical electromotive force and rectifying action, the substrate 1 is insulated from the layer 3 through the layer 2 on a portion having no voltage impression and optical electromotive force and rectifying action based on Schottky junction are not generated on the portion. Thus, the memory element for detecting the existence of optical electromotive force by impressing a voltage at the time of recording and radiating light 4 near the layer 3 at the time of reproducing can be obtained. |
