| 摘要 |
PURPOSE:To prevent the generation of the peeling of an electrode on joining by forming a junction pad onto a semiconductor substrate surface roughened through anisotropic etching. CONSTITUTION:When the surface of a GaAs substrate 1 is treated with the mixed solution of a sodium hydroxide aqueous solution and a sodium hypochlorite aqueous solution, the surface of the substrate 1 is etched in an anisotropic manner and roughened, thus increasing an effective surface area. When a Ti film 2 and an Au film 3 are superposed onto the surface of the substrate 1, an electrode is not peeled when an Au wire 4 is joined. A Pt film 6 is formed between the Ti film 2 and an Au plating layer 7 and used for the feed of Au plating, and the simultaneous improvement of adhesion bond is also effective similarly. The same effect is acquired even in the case of Cr-Au and Cr-Pt-Au. |
