| 摘要 |
PURPOSE:To obtain a compelete contact type image sensor having a high S/N ratio by surrounding the side surface of a photoelectric conversion layer faced to an optical path formed by a lighting window by a reflecting mirror. CONSTITUTION:A Cr thin-film 2 is shaped onto a glass plate 1 and a window 7 is bored, and a transparent SiO2 film 3 is superposed and a lower electrode 8 consisting of Cr is formed. A photoelectric conversion layer 4 mainly composed of amorphous Si:H is stacked, an optical path section passing through a lighting window 7 is removed through etching, and an upper electrode 9 by ITO is attached. Sensors 10 are formed, and reflecting films 11 are shaped. MgF2 having a small refractive index is laminated on the side surface 12 of the photoelectric conversion layer in one quarter of a light-source wavelength lambda, and Si3N4 having a large refractive index is superposed in lambda/4. A transparent SiO2 protective layer 5 is stacked. Since the reflecting film 11 prevents intrusion to one part of the sensor through the side surface 12 of beams passing through the lighting window, the generation of carriers on the side surface of the photoelectric conversion layer 4 is reduced, and beams can be introduced to a draft 6 efficiently, thus acquiring a high SN ratio. |
