发明名称 CADMIUM TUNGSTATE SINGLE CRYSTAL
摘要 PURPOSE:To provide the titled single crystal containing a slight amount of silicon, having low fluctuation of light emission and excellent light emission efficiency and useful as a scintillator for detecting radiation such as X-ray, gamma-ray, etc. CONSTITUTION:Each of CdO powder and WO3 powder having purity of 99.999% is added with 10<-6>-10<-3>mol of Si or SiO2 (in terms of Si). Equimolar amounts of the mixed CdO powder and WO3 powder are put into a platinum crucible and melted by heating with a high-frequency heater. A CdWO4 single crystal containing slight amount of silicon is grown from the molten mixture by Czochralski process.
申请公布号 JPS63123899(A) 申请公布日期 1988.05.27
申请号 JP19860268711 申请日期 1986.11.13
申请人 TOSHIBA CORP 发明人 SHIRAKAWA YASUHIRO;KOMI TADAO
分类号 C01G41/00;C30B29/32 主分类号 C01G41/00
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