| 摘要 |
<p>PURPOSE:To improve the yield of a transistor by oxidizing the surface of an operation semiconductor layer exposed onto the base when a pinhole is formed to an insulating film when a conductive layer constituting source-drain electrodes, the operation semiconductor layer, a gate insulating film and a gate electrode are shaped onto a transparent insulating substrate. CONSTITUTION:An ITO layer 2 organizing source-drain electrodes is formed onto a glass substrate 1, and the surface of the layer 2 is coated with an n<+> type a-Si layer 3. An operation semiconductor layer 4 consisting of a-Si is shaped onto the whole surface, burying a section between the electrodes, and a gate electrode 6 is applied onto the layer 4 through a gate insulating film 5 composed of an SiN layer, thus manufacturing a thin-film transistor. In the constitution, when the formation of a conductive path, a pinhole 8, in the film 5 and opening to the layer 4 of the base of the pinhole 8 are determined, plasma anodization is executed, and the opening is clogged by an insulating film 9 shaped by selectively oxidizing the layer 4. Accordingly, even when the electrode 6 is applied without determining the generation of the pinhole 8 and the material of the electrode 6 intrudes, no short-circuit is generated.</p> |
