| 摘要 |
PURPOSE:To prevent an electrode from being exfoliated during a wire-bonding process, to prevent a purple plaque from being produced and to enhance the yield and the reliability of a semiconductor device by a method wherein an Al electrode or an Al alloy electrode is formed on a semiconductor substrate whose surface has been made rough by anisotropic etching, a pad coated with a gold film is formed on the surface of the assembly through a refractory metal or a refractory metal nitride film and a gold wire is connected to said pad. CONSTITUTION:An Al film 2 is formed on a semiconductor substrate 1 whose surface 1' has been made rough; a titanium nitride (TiN) film 5 is applied on the surface; in addition, an Au film 6 is formed on the surface; an Au wire 3 is bonded to the Au film 6. The rough surface of the semiconductor substrate 1 can be obtained in such a way that the surface is etched by using a mixed solution of an aqueous solution of sodium hydroxide and another aqueous solution of sodium hypochlorite. Because uneven parts are formed on the surface of the substrate with an electrode constructed in this manner, the effective surface area is increased and the bonding strength is enhanced even with the small pad area of about 30 mum. Because the TiN film 5 acting as a reaction-preventing layer exists between the Al film 2 and the Au film 6, no purple plaque is produced. |
