| 摘要 |
PURPOSE:To obtain a material for inexpensive semiconductor photodetectors which has a fully large absorption coefficient and which can be manufactured by an Si device process, by using a germanium-silicon mixed crystal in the light-receiving part of the element. CONSTITUTION:A (p) type Ge1-xSix layer 1 and a (n) type Ge1-xSix layer 2 are formed into pn junction, and this structure of the device enables th introduction of light from an arbitrary position. This structure can be manufactured by a vapor growth method in which a mixed gas of SiH4 and GeH4 is used and by a molecular beam epitaxy method. A photodiode can be manufactured by mounting a (n) type electrode and a (p) type electrode on this structure. Besides, because SiO2 can be used for an insulating film, a solid - state image sensing element can be manufactured by the use of a present process for Si devices. Because an absorption coefficient of light is large, a further integrated and fined element can be inexpensively manufactured.
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