| 摘要 |
PURPOSE:To make it possible to measure the good or bad of a semiconductor element in a short time using a laser beam by a method wherein the title device is provided with a means to measure an electrical change which is generated in the semiconductor element by irradiating the laser beam. CONSTITUTION:A laser beam is scanned by a scanning system 7b and the laser beam made its beam diameter into a beam diameter of 1mm or the like, for example, by an optical system 7c is irradiated on the whole surface of a semiconductor element. A change in the power source current of the semiconductor element, for example, at this time is measured by a measuring part 4 through a probe 3, data on the irradiation positions in X and Y directions of the laser beam, which are obtained from the scanning signal of the scanning system 7b, and the change in the power current are housed in a data housing part 5 as three-dimensional data and at the point of end of the measurement, these measured data and data measured about a non-defective semiconductor element, for example, are compared with each other in a data comparison part 6 and the good or bad of the semiconductor element measured is decided.
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