| 摘要 |
PURPOSE:To enable the alloying process to be performed having no atmospheric effect such as oxidation etc. on an electrode material by a method wherein an interfacial part between a semiconductor substrate and in electrode material coating is alloyed by irradiation with electron beams and then the electrode material coating is selectively removed to form an electrode. CONSTITUTION:An insulating layer 2 comprising Si3N4 with an opening 7 corresponding to an electrode forming part is previously formed therein. First, photoresist is exposed to specified pattern to form a resist pattern forming an electrode. Second, an electrode material layer 3 comprising AuGeNi is formed on the overall surface of substrate 1 by vacuum evaporation process. Then, the overall surface of substrate 1 left in the same vacuum vessel is irradiated with electron beams 5. Later, a resist 8 is provided on a part corresponding to an electrode part. Furthermore, the overall surface is irradiated with Ar<+> ion beams 6 at ion accelerating voltage of 1000 volts for ion milling process to removed the electrode material excluding the electrode part. Finally, any residual resist 8 is removed to form an ohmic electrode 3A.
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