| 摘要 |
PURPOSE:To grow the excellent crystal of compound semiconductor on a substrate by a method wherein the substrate is placed on a mounting means, and the raw gas for vapor growth is made to flow from diagonally above through the intermediary of a raw gas feeding hole. CONSTITUTION:A feeding pipe 1c is connected to the raw gas feeding system 11 which feeds vapor growth raw gas and, at the same time, the above-mentioned feeding pipe it is installed in such a manner that the raw gas fed from the raw gas feeding system 11 is fed in an oblique direction from the upper side to the lower side against the substrate rest 3 located almost in the intermediate position in the axial direction of the cylinder of reaction furnace 1 through the intermediaries of the feeding pipe 1c and a feeding hole 1a. The raw gas feeding hole 1a is provided on the top edge of a vertical type reaction furnace 1 and, on the other hand, when the crystal of a compound semiconductor is grown on a substrate 10, the substrate rest 3 on which the substrate 10 will be placed is positioned almost at the intermediate position on the cylinder plane surface of the reaction furnace 1. As a result, the raw gas is supplied as if it slides on the upper surface of the substrate 10 without stagnation in the oblique direction from the upper direction to the lower direction against the horizontal direction from the feeding hole 1a or 1b, the used raw gas is exhausted by an exhaust pump 12 through the intermediary of an exhaust pipe 13 and, accordingly, the compound semiconductor crystal of good quality can be grown on the substrate 10.
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