| 摘要 |
PURPOSE:To prevent a bending point from being formed in a trench by containing chloride gas of silicon and nitrogen-containing gas and hydrocarbon gas in etching gas in a method of etching a substrate by generating a plasma in the etching gas to be able to anisotropically etch it with good reproducibility. CONSTITUTION:A silicon substrate 1 coated with a mask 2 is attached on a parallel electrode plate, a voltage is applied to the plate while introducing etching gas into a reaction vessel of vacuum state to generate a plasma in the etching gas. The etching gas is composed of silicon chloride gas, nitrogen- containing gas and hydrocarbon gas as bases to obtain an etching surface having no bending point on the sidewall of a trench 3. When a polysilicon and an oxide film are deposited, for example, by a CVD after the etching is finished, the film is not separated, or the thermal contact at the bending point is not deteriorated.
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