| 摘要 |
PURPOSE:To eliminate an overhanging form to be generated at a gate electrode by inclining the sectional shape of a pattern end, etching back an insulating film and a polycrystalline silicon by anisotropically dry etching by equivalent etching rates, and projecting the sectional shape of the insulating film to the polycrystalline silicon. CONSTITUTION:A polycrystalline silicon film 23 is grown by a chemical vapor growing method on a silicon substrate 21 having a first oxide film 22 and a second oxide film 24, and a phosphorus glass film 25 is further grown. Then, it is coated with a photoresist 26, a phosphorus glass film 25 is isotropically etched with a dilute fluoric acid containing ammonium fluoride, and a pattern end is inclined. The whole surface is etched by anisotropic dry etching under the conditions that the etching speeds of the phosphorus glass and the polycrystalline silicon become equal with each other, and the shape of the layer 25 is projected on the pattern end of the film 23. Thus, the machining accuracy of a gate electrode is increased to reduce the resistance of the gate electrode, thereby accelerating the operation of an integrated circuit. |
