发明名称 |
TRANSISTOR PROTECTION CIRCUIT |
摘要 |
An output transistor (T1) is to be protected from damage due to excessive currents. This transistor supplies a current (Io) to a load (3) and is driven by a driver transistor (T2). The base-emitter junction of a current-sensing trnsistor (T3) is connected in parallel with that of the output transistor (T1). The collector current of transistor (T3) is a measure of the current (Io) of the output transistor (T1). A current generator (5) supplying a reference current (Iref) is coupled to the collector of the current-sensing transistor (T3). If the collector current of the current-sensing transistor exceeds the reference current (Iref) the protection circuit is activated so that the driver transistor is bottomed via an emitter-follower (T4). The base current of transistor T1 is thereby limited. Thus, the output current of the output transistor is limited to a maximum value which is substantially equal to the product of the reference current (Iref) and the ratio between the emitter areas of the output transistor (T1) and the current-sensing transistor (T3). |
申请公布号 |
DE3470638(D1) |
申请公布日期 |
1988.05.26 |
申请号 |
DE19843470638 |
申请日期 |
1984.08.14 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
BAHLMANN, JOHANNES PETRUS MARIA |
分类号 |
H03F3/343;H03F1/52;H03F3/34;(IPC1-7):H03F1/52 |
主分类号 |
H03F3/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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