| 摘要 |
PURPOSE:To eliminate the malfunctions of a wiring electrode and device characteristics by removing by etching a second insulating layer from the upper surface to a desired film thickness by anisotropic dry etching. CONSTITUTION:After an oxide film layer 2, and a polysilicon resistance layer 3 are formed on a semiconductor substrate 1, an oxide film 4 for protecting a polysilicon resistance pattern is formed by a normal vapor growing method in the thickness of 2 to 4 times as large as the thickness of the layer 3. Then, the film 4 is removed by etching from the upper surface by a normal RIE method (anisotropic) to a desired film thickness. Thereafter, a polysilicon resistor, a contacting window and a wiring electrode are formed similarly to a conventional manufacturing method. Thus, the stepwise disconnection, malfunction of the electrode, and an improper resistance value due to the metal remaining at the time of working the electrode can be reduced.
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